pk l 0016 n-ch 10 0v fast switching mosfets symbol parameter rating units v ds drain - source voltage 100 v v gs gate - sou r ce voltage 2 0 v i d @t a =25 continuous drain current, v gs @ 10v 1 6 a i d @t a = 7 0 continuous drain current, v gs @ 10v 1 4 .7 a i dm pulsed drain current 2 2 4 a eas single pulse avalanche energy 3 1 1.3 mj i as avalanche current 1 5 a p d @t a =25 total power dissipation 4 1.5 w t stg storage temperature range - 55 to 150 t j operating junction temperature range - 55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 (steady state) --- 70 /w thermal resistance junction-ambient 1 (t Q 10s ) --- 35 /w bvdss rds on id 10 0v 47m 6a the pk l 0016 is the high cell density trenched n-ch mosfets, which provide excellent rdson and gate charge for most of the synchronous buck converter applications. the pk l 0016 meet the rohs and green product requirement, 100% eas guaranteed with full function reliability approved. ? green device available ? super low gate charge ? excellent cdv/dt effect decline ? advanced high cell density trench technology description absolute maximum ratings thermal data so t223 pin configuration product summa ry 1 www.paceleader.tw
n - ch 10 0v fast switching mosfets 2 symbol parameter conditions min. typ. max. unit bv dss drain - source breakdown voltage v gs =0v , i d =250ua 10 0 --- --- v e bv dss / e t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.0 98 --- v/ r ds(on) static drain - source on - resistance 2 v gs =10v , i d = 5 a --- --- 4 7 m : v gs =4.5v , i d = 5 a --- --- 5 0 v gs(th) gate threshold voltage v gs =v ds , i d =250ua 1. 2 --- 2.5 v e v gs(th) v gs(th) temperature coefficient --- - 5.52 --- mv/ i dss drain - source leakage current v ds = 80 v , v gs =0v , t j =25 --- --- 1 0 ua v ds = 80 v , v gs =0v , t j =55 --- --- 100 i gss gate - source leakage current v gs = f 20v , v ds =0v --- --- f 100 na gfs forward transconductance v ds = 5 v , i d = 5 a --- 6 .2 --- s q g total gate charge (10 v) v ds = 80 v , v gs = 10 v , i d = 5 a --- 60 --- nc q gs gate - source charge --- 9.2 --- q gd gate - drain charge --- 9.9 --- t d(on) turn - on delay time v dd =50 v , v gs = 10 v , r g = 3.3 : i d =3 a --- 10.8 --- ns t r rise time --- 27 --- t d(off) turn - off delay time --- 56 --- t f fall time --- 24 --- c iss input capacitance v ds =1 5v , v gs =0v , f=1mhz --- 3848 --- pf c oss output capacitance --- 137 --- c rss reverse transfer capacitance --- 82 --- symbol parameter conditions min. typ. max. unit i s continuous source current 1 , 5 v g =v d =0v , force current --- --- 6 a i sm pulsed source current 2 , 5 --- --- 2 4 a v sd diode forward voltage 2 v gs =0v , i s = 1 a , t j =25 --- --- 1.2 v t rr reverse recovery time i f = 5 a , d i /dt=1 00a/s , t j =25 --- 25 --- ns q rr reverse recovery charge --- 29 --- nc electrical characteristics (t j =25 , unless otherwise noted) diode characteristics note : 1.the data tested by surface mounted on a 1 inch 2 fr - 4 board with 2oz copper. 2.the data tested by pulsed , pulse width ? 300us , duty cycle ? 2% 3.the eas data shows max. rating . the test condition is v dd =25v,v gs =10v,l=0.1mh,i as = 1 5 a 4.the power dissipation is limited b y 1 5 0 junction temperature 5 .the data is theoretically the same as i d and i dm , i n real applications , should be limited by total power dissipation. pk l 0016 2 www.paceleader.tw
n - ch 10 0v fast switching mosfets 3 3 0 3 6 9 12 15 0 0.2 0.4 0.6 0.8 1 v ds , drain-to-source voltage (v) i d drain current (a) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 0 2 4 6 8 10 12 0.00 0.25 0.50 0.75 1.00 v sd , source-to-drain voltage (v) i s source current(a) t j =150 w t j =25 w 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( 3 www.paceleader.tw 0 3 6 9 12 15 0 0.2 0.4 0.6 0.8 1 v ds , drain-to-source voltage (v) i d drain current (a) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 0 2 4 6 8 10 12 0.00 0.25 0.50 0.75 1.00 v sd , source-to-drain voltage (v) i s source current(a) t j =150 w t j =25 w 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( w ) normalized v gs(th) (v)
n - ch 10 0v fast switching mosfets 10 100 1000 10000 1 5 9 13 17 21 25 v ds , drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r - $ ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t c +p dm xr jc 4 www.paceleader.tw 10 100 1000 10000 1 5 9 13 17 21 25 v ds , drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r - $ ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t c +p dm xr - & t on t t d ( o n ) t r t o n t d ( o f f ) t f t o f f v d s v g s 9 0 % 1 0 % i a s v g s b v d s s v d d e a s = 1 2 l x i a s 2 x b v d s s b v d s s - v d d
pk l 0016 n - ch 10 0v fast switching mosfets p a c k a g e i n f o r m a t i o n ( s o t - 2 2 3 ) 5 www.paceleader.tw
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